Protective-layer-covered gas separation membrane, method for producing protective-layer-covered gas separation membrane, gas separation membrane module, and gas separation apparatus
AssigneeFUJIFILM Corporation
InventorsMakoto Sawada, Satoshi Yoneyama, Yusuke Mochizuki
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Abstract
A protective-layer-covered gas separation membrane has a gas separation membrane that satisfies specific conditions such as having a resin layer containing a compound having a siloxane bond, a protective layer located on the resin layer containing a compound having a siloxane bond of the gas separation membrane, and a porous layer on the protective layer. The protective-layer-covered gas separation membrane is produced. A gas separation membrane module and a gas separation apparatus have the protective-layer-covered gas separation membrane.
Claims10
A protective-layer-covered gas separation membrane comprising:
- a gas separation membrane including a resin layer containing a compound having a siloxane bond;
- a protective layer located on the resin layer;
- and
- a porous layer on the protective layer,
- wherein the protective layer includes a region PLi present in the porous layer and a region PLe present on the porous layer, and
- a degree of infiltration of the protective layer into the porous layer is 10% to 90%, the degree of infiltration being expressed by the following formula:
- degree of infiltration of protective layer into porous layer=100%×(thickness of PLi)/(thickness of PLi+thickness of PLe),
- wherein the porous layer has a carbon dioxide permeability coefficient of 2,000 barrers or more, and
- wherein the gas separation membrane satisfies one of conditions 1, 3, and 4:
- condition 1:
- the resin layer satisfies inequalities 1 and 2:
- inequality 1:
- 0.9≥A/B≥0.55
- inequality 2:
- B≥1.7
- wherein A represents an O/Si ratio that is a ratio of the number of oxygen atoms to the number of silicon atoms contained in the resin layer at a depth of 10 nm from a surface of the resin layer, and B represents an O/Si ratio that is a ratio of the number of oxygen atoms to the number of silicon atoms in the surface of the resin layer;
- condition 3:
- a minimum percentage Si0 of Si2+ and Si3+ peaks relative to all Si peaks in ESCA depth profiling of the resin layer is 1% to 40%;
- and
- condition 4:
- a positron lifetime τ3 of a third component formed by implantation of a positron with an energy of 1 keV into the surface of the resin layer is 3.40 to 4.20 ns.
Dependencies are inferred from the claim text.