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US 10,904,996 B2Granted
Substrate support with electrically floating power supply
AssigneeApplied Materials, Inc.
InventorsTravis Lee Koh, Haitao Wang, Philip Allan Kraus, Vijay D. Parkhe, Daniel Distaso, Christopher A. Rowland, Mark Markovsky, Robert Casanova
Life of this patent
Estimating the term…
Abstract
Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.
Claims19
A processing method, comprising:
- electrostatically chucking a substrate to a substrate support by applying a first DC power from a first DC power source to a chucking electrode embedded in a dielectric material of the substrate support, wherein
- a surface of the substrate support and a surface of the substrate electrostatically chucked thereto define a plenum, and
- the substrate support is disposed in a processing volume of a processing chamber;
- delivering helium gas to the plenum;
- and
- biasing the substrate by applying a second DC power from a second DC power source to a plurality of conductive pins disposed in the substrate support and extending upwardly from a substrate supporting surface thereof, wherein the plurality of conductive pins are in direct contact with the substrate electrostatically chucked to the substrate support, and wherein the first DC power source is electrically coupled to a reference voltage contact of the second DC power source.
3 more elements
A processing method, comprising:
- forming a plasma in a processing volume of a processing chamber by flowing a gas into the processing volume and applying a plasma power to a plasma electrode facing a substrate support;
- electrostatically chucking a substrate to a substrate support by applying a first DC power from a first DC power source to a chucking electrode embedded in a dielectric material of the substrate support, wherein
- a surface of the substrate support and a surface of the substrate electrostatically chucked thereto define a plenum,
- the substrate support is disposed in the processing volume, and
- the substrate support is disposed on a support base to form a substrate support assembly;
- delivering helium gas to the plenum;
- and
- biasing the substrate by applying a second DC power from a second DC power source to a plurality of conductive pins disposed in the substrate support and extending upwardly from a substrate supporting surface thereof, wherein
- the plurality of conductive pins are in direct contact with the substrate electrostatically to the substrate support,
- the first DC power source is electrically coupled to a reference voltage contact of the second DC power source, and
- the second DC power comprises a pulsed DC power having a frequency between about 10 Hz and about 100 kHz.
8 more elements
A processing method, comprising:
- positioning a substrate on a surface of a substrate support disposed in a processing volume of a processing chamber, the substrate support comprising a chucking electrode embedded in a layer of dielectric material and a plurality of conductive pins individually disposed through the dielectric material to make direct contact with the substrate during processing thereof;
- flowing a processing gas into the processing volume;
- forming a plasma of the processing gas;
- electrostatically chucking the substrate to the substrate support by applying a first DC power from a first DC power source to the chucking electrode, wherein
- the first DC power source is electrically coupled between the chucking electrode and a reference voltage contact of a second DC power source,
- the second DC power source is electrically coupled to the plurality of conductive pins, and
- a surface of the substrate support and a surface of the substrate electrostatically chucked thereto define a plenum;
- delivering helium gas to the plenum;
- and
- biasing the substrate by applying a second DC power from the second DC power source to the plurality of conductive pins.
7 more elements
Dependencies are inferred from the claim text.