Planar field emission transistor
AssigneeWiSys Technology Foundation, Inc.
InventorsCharles D Nelson, Harold T Evensen
Life of this patent
Estimating the term…
Abstract
A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.
Claims17
A field emission transistor comprising:
- a planar substrate;
- a first and second electrode supported by the substrate in spaced opposition across a separation region extending along a plane of the substrate;
- a plurality of carbon nanotubes in electrical communication with the first electrode and extending from the first electrode toward the second electrode to terminate at a free space region in the separation region;
- and
- a gate electrode for establishing an electrical field in the free space region;
- wherein electrons may be transmitted between the first and second electrodes by a combination of electrical conduction through the plurality of carbon nanotubes and field emissions in the free space region, the latter controllable by the gate electrode;
- wherein the first electrode is a metal layer applied to the substrate over pre-applied carbon nanotubes.
The field emission transistor of claim/wherein the gate is separated from the free space region by an insulating material.
A method of fabricating a field emission transistor comprising:
- applying a plurality of carbon nanotubes to an insulating surface of a substrate;
- etching a gap in the carbon nanotubes to define a free space region;
- applying a first electrode to the substrate in electrical communication with the carbon nanotubes on one side of the free space region;
- applying a second electrode to the substrate separated from the carbon nanotubes in communication with the first electrode by the free space region;
- applying a gate electrode to the substrate positioned to establish a controlling electrical field within the free space region;
- and
- transmitting electrons between the first and second electrodes by a combination of electrical conduction through the plurality of carbon nanotubes and field emissions in the free space region, the latter controllable by the gate electrode.
Dependencies are inferred from the claim text.