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AssigneeKorea Institute of Science and Technology
InventorsJae-Hoon Han, Sanghyeon Kim, Pavlo Bidenko, Subin Lee, Jin-Dong Song
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An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.
An optical phase shifter comprising:
A semiconductor-insulator-semiconductor (SIS) optical phase shifter comprising:
Dependencies are inferred from the claim text.