Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals

A silicon photonic chip, comprising:

• a silicon on insulator wafer;
• and
• an electro-optical device on the silicon on insulator wafer, the electro-optical device is a lateral current injection electro-optical device comprising a slab having:
• a pair of structured doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair of structured doped layers including an n-doped layer and a p-doped layer, wherein each of the p-doped layer and the n-doped layer is configured as a two-dimensional photonic crystal;
• the n-doped layer is further structured to form an output waveguide core for out-coupling optical radiation from the slab, the output waveguide core comprising a tapered portion, protruding from an edge of the n-doped layer and extending parallel to an extraction portion of the output waveguide core formed as a line defect in a lattice of holes of the n-doped layer, wherein one or more rows of holes in the lattice are missing at the level of the line defect;
• and
• a separation section extending between the pair of structured doped layers, the separation section fully separates the p-doped layer from the n-doped layer, wherein the separation section comprises:
• current blocking trenches, and
• an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.