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US 10,897,120 B2Granted
Externally-strain-engineered semiconductor photonic and electronic devices and assemblies and methods of making same
AssigneeUniversity of Houston System
InventorsJae-Hyun Ryou, Shahab Shervin, Seung Hwan Kim
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Abstract
Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
Claims11
A method of manufacturing a device, comprising:
- forming a plurality of light-emitting devices, wherein forming each light-emitting device of the plurality of light-emitting device comprises:
- disposing a p-type electrode in contact with a p-type semiconductor layer;
- disposing a light-active region between the p-type semiconductor layer and at least one n-type semiconductor layer;
- disposing an n-type electrode in contact with the n-type semiconductor layer;
- and
- producing a bend-up or bend-down strain condition by applying strain in at least one strain cycle to the each of the light-emitting devices of the plurality of light-emitting devices, wherein the each light-emitting device retains a predetermined amount of strain subsequent to the at least one strain cycle to produce a strained light-emitting device;
- and
- disposed each strained light-emitting device of the plurality of light-emitting devices in a packaging structure, wherein the packaging structure has a matching curvature to that of the strained light-emitting device.
5 more elements
Dependencies are inferred from the claim text.