Temperature sensor integrated with MOS capacitor for stabilizing lasers

A multi-wavelength semiconductor laser with stabilization enhancements, comprising:

• a silicon-on-insulator (SOI) substrate layer;
• an upper silicon layer deposited on the SOI substrate layer;
• a III-V material layer deposited on the upper silicon layer forming an active region of a semiconductor laser to generate a multi-wavelength optical signal;
• a dielectric layer deposited between the III-V material layer and the upper silicon layer forming a MOS capacitor, wherein the MOS capacitor tunes the multi-wavelength optical signal for stabilization;
• and
• a temperature sensor layer deposited on the silicon substrate layer, wherein the temperature sensor measures a temperature that is indicative of a temperature-induced wavelength shift of the generated multi-wavelength optical signal.

A method of stabilization lasing wavelengths of a semiconductor laser, comprising:

• measuring a signal indicative of an operational temperature of the semiconductor laser during operation;
• determining an operational temperature of the semiconductor laser during operation based on the measured signal;
• determining a temperature-induced wavelength shift based on the measured operational temperature;
• and
• generating a compensation signal to apply to an integrated MOS capacitor of the semiconductor laser to compensate for the temperature-induced wavelength shift of the multi-wavelength optical signal.