US 10,897,009 B2Granted

Resistive memory cells and precursors thereof, methods of making the same, and devices including the same

AssigneeIntel Corporation

InventorsNiloy Mukherjee, Ravi Pillarisetty, Prashant Majhi, Uday Shah, Ryan E Arch, Markus Kuhn, Justin S. Brockman, Huiying Liu, Elijah V Karpov, Kaan Oguz, Brian S. Doyle, Robert S. Chau

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Abstract

Resistive memory cells, precursors thereof, and methods of making resistive memory cells are described. In some embodiments, the resistive memory cells are formed from a resistive memory precursor that includes a switching layer precursor containing a plurality of oxygen vacancies that are present in a controlled distribution therein, optionally without the use of an oxygen exchange layer. In these or other embodiments, the resistive memory precursors described may include a second electrode formed on a switching layer precursor, wherein the second electrode is includes a second electrode material that is conductive but which does not substantially react with oxygen. Devices including resistive memory cells are also described.

Claims9

Dependent claims

A resistive memory cell precursor, comprising:

a first electrode including a first electrode material, the first electrode having opposing first and second surfaces;
a switching layer precursor having opposing first and second surfaces, the first surface of the switching layer precursor formed directly on the first surface of the first electrode;
an oxidized oxygen exchange layer having opposing first and second surfaces, the first surface of the oxidized oxygen exchange layer formed directly on the second surface of the switching layer precursor;
an oxygen exchange layer having opposing first and second surfaces, the first surface of the oxygen exchange layer formed directly on the second surface of the oxidized oxygen exchange layer, the oxygen exchange layer including an oxygen reactive material;
and
a second electrode including a second electrode material, the second electrode having opposing first and second surfaces, the first surface of the second electrode formed directly on the second surface of the switching layer precursor;
wherein the switching layer precursor comprises a sub-stoichiometric oxide and a plurality of oxygen vacancies, said oxygen vacancies distributed between the first and second surfaces of the switching layer precursor;
and
wherein the switching layer precursor is configured such that, in response to application of a forming voltage, said switching layer precursor converts to a switching layer in which at least a portion of said plurality of oxygen vacancies form one or more filaments, each of the one or more filaments providing a low resistance pathway between said first electrode and said second electrode.

6 more elements

A resistive memory cell precursor, comprising:

a first electrode including a first electrode material, the first electrode having opposing first and second surfaces;
a switching layer precursor having opposing first and second surfaces, the first surface of the switching layer precursor formed directly on at least a portion of the first surface of the first electrode, the switching layer precursor including a substantially stoichiometric oxide in which the mole fraction of oxygen in the oxide differs from the stoichiometric amount by less than about 0.5%;
an oxygen exchange layer having opposing first and second surfaces, the first surface of the oxygen exchange layer formed directly on at least a portion of the second surface of the switching layer precursor, the oxygen exchange layer including an oxygen reactive material;
and
a second electrode including a second electrode material, the second electrode having opposing first and second surface, the first surface of the second electrode formed directly on at least a portion of the second surface of the switching layer precursor, the second electrode material including a conductive material that does not react with oxygen;
wherein:
the switching layer precursor and the oxygen exchange layer are configured such that:
in response to the execution of a heat treatment process, at least a portion of the substantially stoichiometric oxide is converted to a sub-stoichiometric oxide including a plurality of oxygen vacancies, and at least a portion of the oxygen reactive material is converted to reacted oxygen reactive material, the oxygen vacancies having a controlled distribution defined between a first and second surface of the switching layer precursor;
and
in response to the execution of a forming process, the switching layer precursor is converted to a switching layer in which at least a portion of the oxygen vacancies form a low resistance pathway between the first electrode and the second electrode.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/414,956Filed 17 May 2019 · continuation
Published: US 2019/0348604 A114 Nov 2019
Granted: 19 Jan 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10N 70/028
Formation of switching materials, e.g. deposition of layers: by conversion of electrode material, e.g. oxidation
H10N 70/021
Manufacture or treatment of multistable switching devices: formation of switching materials, e.g. deposition of layers
H10N 70/023
Formation of switching materials, e.g. deposition of layers: by chemical vapor deposition, e.g. MOCVD, ALD
H10N 70/24
Multistable switching devices, e.g. memristors: based on migration or redistribution of ionic species, e.g. anions, vacancies

Family

PCT/US2014/072330Parent of this continuation · filed 24 Dec 2014
US 2019/0348604 A1Pre-grant publication · published 14 Nov 2019
Application15/529,907Parent of this continuation
US 10,516,109 B2Parent of this continuation
US 2018/0062077 A1Published application
US 10,897,009 B2This patent

From the US filing history. Foreign family members aren’t listed.