US 10,897,007 B2 · Magnetic memory device

Abstract

According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.

Claims20

Dependent claims

A magnetic memory device, comprising:

a first magnetic region;
a first counter magnetic region;
and
a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region,
the first magnetic region including a first magnetic film, a second magnetic film, and an intermediate film,
the first magnetic film being provided between the second magnetic film and the first nonmagnetic region,
the intermediate film including Ru and being provided between the first magnetic film and the second magnetic film,
a distance along a first direction between the first magnetic film and the second magnetic film being not less than 1.8 nm and not more than 2.2 nm, the first direction being from the first counter magnetic region toward the first magnetic region.

5 more elements

A magnetic memory device, comprising:

a conductive member including a first portion, a second portion, and a third portion between the first portion and the second portion;
a first magnetic layer;
a first counter magnetic layer provided between the third portion and the first magnetic layer in a first direction crossing a second direction, the second direction being from the first portion toward the second portion;
and
a first nonmagnetic layer provided between the first magnetic layer and the first counter magnetic layer,
the third portion including a first conductive region, a second conductive region, and a third conductive region,
the second conductive region being between the third conductive region and the first counter magnetic layer in the first direction,
the first conductive region being between the second conductive region and the third conductive region in the first direction,
a first concentration of boron in the first conductive region being not more than a second concentration of boron in the second conductive region and lower than a third concentration of boron in the third conductive region.

6 more elements

Dependencies are inferred from the claim text.

Magnetic memory device

Life of this patent

Magnetic memory device

Life of this patent

Abstract

Claims20