Solid state lighting devices with accessible electrodes and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov
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Abstract
Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
Claims20
A method of manufacturing a light emitting die having an overall depth, the method comprising:
- forming a first electrode in contact with a first semiconductor material of the light emitting die;
- forming a second electrode in contact with a second semiconductor material of the light emitting die, the second electrode being spaced apart from the first electrode;
- and
- exposing a portion of the second electrode by a notch, wherein the notch has a depth less than the overall depth.
A method of manufacturing a light emitting die having an overall depth, the light emitting die having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material and an active region between the first and second semiconductor materials, the method comprising:
- forming a first electrode in contact with the first semiconductor material;
- forming a second electrode in contact with the second semiconductor material of the light emitting die, the second electrode being spaced apart from the first electrode;
- and
- exposing a portion of the second electrode by a notch, wherein the notch has a depth less than the overall depth.
A method of manufacturing a light emitting die having an overall depth, the method comprising:
- forming a first electrode in contact with a first semiconductor material;
- forming a second electrode in contact with a second semiconductor material of the light emitting die, the second electrode being spaced apart from the first electrode;
- and
- exposing a portion of the second electrode by a notch, wherein the notch has a depth less than the overall depth, wherein the second electrode includes a first portion and a second portion extending from the first portion, and wherein the first portion of the second electrode is covered by the light emitting die, and wherein the second portion of the second electrode laterally extends beyond the light emitting die, and wherein the second portion of the second electrode has a lateral depth generally the same as the depth of the notch.
Dependencies are inferred from the claim text.