Light-emitting diode with hyperbolic metamaterial
AssigneeFacebook Technologies, LLC
InventorsErik Shipton, Tanya Malhotra
Life of this patent
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Abstract
A light-emitting diode includes a first semiconductor region of one of p- or n-conductivity types, a second semiconductor region of the other one of p- or n-conductivity types, forming a p-n junction with the first semiconductor region, and a quantum well layer at the p-n junction between the first and second semiconductor regions. A hyperbolic metamaterial structure is provided in the second semiconductor region. The hyperbolic metamaterial structure is coupled to the quantum well layer for extracting light from the quantum well layer. The hyperbolic metamaterial structure may be patterned to provide an array of nanoantennas to apodize the emitted beam, and to control the polarization state of the emitted beam.
Claims18
The A light-emitting diode (LED) comprising:
- a first semiconductor region of one of p- or n-conductivity types;
- a second semiconductor region of the other one of p- or n-conductivity types, forming a p-n junction with the first semiconductor region;
- a quantum well layer at the p-n junction between the first and second semiconductor regions;
- and
- a hyperbolic metamaterial structure in the second semiconductor region, wherein the hyperbolic metamaterial structure is coupled to the quantum well layer;
- wherein the hyperbolic metamaterial structure comprises an array of features coupled to the quantum well layer, wherein at least some of the features of the array are inclined with respect to the quantum well layer.
A display device comprising:
- an array of light-emitting diodes, each light-emitting diode comprising:
- a first semiconductor region of one of p- or n-conductivity types;
- a second semiconductor region of the other one of p- or n-conductivity types, forming a p-n junction with the first semiconductor region;
- a quantum well layer at the p-n junction between the first and second semiconductor regions;
- and
- a hyperbolic metamaterial structure in the second semiconductor region, wherein the hyperbolic metamaterial structure is coupled to the quantum well layer;
- wherein the hyperbolic metamaterial structure comprises an array of features coupled to the quantum well layer, wherein at least some of the features of the array are inclined with respect to the quantum well layer;
- and
- an element having optical power optically coupled to the array of light-emitting diodes and spaced apart therefrom for redirecting optical beams emitted by the array of light-emitting diodes.
A method of manufacturing a light-emitting diode (LED), the method comprising:
- providing a die comprising:
- a first semiconductor region of one of p- or n-conductivity types;
- a second semiconductor region of the other one of p- or n-conductivity types forming a p-n junction with the first semiconductor region;
- and a quantum well layer at the p-n junction between the first and second semiconductor regions;
- and
- forming a hyperbolic metamaterial structure in the second semiconductor region, such that:
- the hyperbolic metamaterial structure is coupled to the quantum well layer;
- and
- the hyperbolic metamaterial structure comprises an array of features coupled to the quantum well layer, wherein at least some of the features of the array are inclined with respect to the quantum well layer.
Dependencies are inferred from the claim text.