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US 10,896,992 B2Granted
Photodiode structures
AssigneeInternational Business Machines Corporation
InventorsJohn J. Ellis-Monaghan, Jeffrey P. Gambino, Mark D. Jaffe, Kirk D. Peterson
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Abstract
Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.
Claims18
A method, comprising:
- forming a waveguide structure in a dielectric material and which is located above metal wirings;
- forming a single crystalline Ge structure formed in the dielectric material and separated from the waveguide structure in the dielectric material by a barrier layer directly in contact with both the single crystalline Ge structure and the waveguide structure and completely separating the single crystalline Ge structure from the waveguide structure;
- and
- forming lined vias and trenches in the dielectric material, over the single crystalline Ge structure, wherein the lined vias and trenches includes a seed layer and filled with a metal material.
1 more element
A method, comprising:
- forming a waveguide structure in a dielectric material and which is located above metal wirings;
- forming a single crystalline Ge structure formed in the dielectric material and separated from the waveguide structure in the dielectric material;
- and
- forming a boundary layer within the single crystalline Ge structure which is provided away from and not over the waveguide structure;
- wherein the single crystalline Ge structure includes nucleation sites which include a capping layer which is in direct contact with both the single crystalline Ge structure and at least one metal filled via.
2 more elements
Dependencies are inferred from the claim text.