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US 10,896,979 B2Granted
Compact vertical injection punch through floating gate analog memory and a manufacture thereof
AssigneeInternational Business Machines Corporation
InventorsEffendi Leobandung, Yulong Li, Tak Ning, Paul Michael Solomon, Chun-Chen Yeh
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Abstract
A vertical injection punchthrough based metal oxide semiconductor (VIPMOS) device and method of manufacturing the same, include a control gate, an erase gate, a floating gate, and an active area where the control gate, the erase gate, and the floating gate are coplanar and perpendicular to the active area.
Claims15
A vertical injection punchthrough-based metal oxide semiconductor (VIPMOS) device, comprising:
- a substrate including a VIPMOS area;
- a control gate disposed on the VIPMOS area;
- an erase gate disposed on the VIPMOS area;
- a floating gate disposed on the VIPMOS area;
- and
- a congruent single active area formed on the VIPMOS area having contacts formed therein, the single active area including an injector and a drain;
- wherein the control gate, the erase gate, and the floating gate are stacked on the single active area and each have a different contact to the single active area, via the contacts,
- wherein the control gate, the erase gate, and the floating gate are coplanar and perpendicular to the single active area,
- wherein the single active area is directly connected, via the contacts formed in the single active area, to each of the control gate, the erase gate, and the floating gate.
6 more elements
A neural network, comprising:
- a vertical injection punchthrough-based metal oxide semiconductor (VIPMOS) device, the device including:
- a substrate including a VIPMOS area,
- a control gate disposed on the VIPMOS area;
- an erase gate disposed on the VIPMOS area;
- a floating gate disposed on the VIPMOS area;
- and
- a congruent single active area formed on the VIPMOS area having contacts formed therein, the single active area including an injector and a drain;
- wherein the control gate, the erase gate, and the floating gate are stacked on the single active area and each have a different contact to the single active area via the contacts,
- wherein the control gate, the erase gate, and the floating gate are coplanar and perpendicular to the single active area,
- wherein the single active area is directly connected, via the contacts formed in the single active area, to each of the control gate, the erase gate, and the floating gate.
7 more elements
Dependencies are inferred from the claim text.