Oxide semiconductor device and method for manufacturing same
AssigneesV Technology Co., Ltd., Tohoku University
InventorsTetsuya Goto, Michinobu Mizumura
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Abstract
In an oxide semiconductor device including an active layer region constituted by an oxide semiconductor, stability when a stress is applied is improved. The oxide semiconductor device includes an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm−3.
Claims3
An oxide semiconductor device comprising:
- an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm−3.
A method for manufacturing an oxide semiconductor device including an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), the method comprising the steps of:
- implanting an ion of an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm−3 into the active layer region;
- and
- irradiating the active layer region into which the ion is implanted, with a laser having a wavelength of 400 nm or less to anneal the active layer region.
Dependencies are inferred from the claim text.