Method of fabricating semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAryan Afzalian
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a channel region in a semiconductor substrate. The channel region is made of a first material. The method also includes forming source and drain regions in the semiconductor substrate. The method further includes forming a recess between the channel region and the drain region. The method further includes forming a tunnel barrier layer in the recess. The tunnel barrier layer is made of a second material, and a bandgap of the second material is greater than a bandgap of the first material. The method further includes forming a gate stack on the channel region.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- forming a source region in a semiconductor substrate;
- forming a channel region extending upward from the semiconductor substrate, wherein the channel region is intrinsic and the channel region is made of a first material;
- forming a tunnel barrier layer over the channel region, wherein the tunnel barrier layer is made of a second material, and a bandgap of the second material is greater than a bandgap of the first material of the channel region;
- forming a drain region on the tunnel barrier layer;
- and
- forming a gate stack around the channel region, wherein forming the gate stack comprises conformally forming a high-k dielectric layer and a metal layer around the channel region, the tunnel barrier layer, and the drain region;
- and etching back the high-k dielectric layer and the metal layer until the drain region is exposed.
A method of fabricating a semiconductor device, the method comprising:
- forming a source region in a semiconductor substrate;
- forming a nanowire extending upward from the semiconductor substrate to define a channel region;
- forming a tunnel barrier layer over an end of the nanowire;
- forming a drain region over the tunnel barrier layer;
- and
- forming a gate stack around the channel region;
- wherein the method further comprises:
- blanketly depositing a nanowire layer and the tunnel barrier layer over the semiconductor substrate;
- and
- patterning the nanowire layer, the tunnel barrier layer, and the semiconductor substrate to expose sidewalls of the source region,
- wherein the nanowire and the tunnel barrier layer are made of different materials, and a bandgap of the tunnel barrier layer is greater than a bandgap of the nanowire, and
- wherein the channel region is intrinsic.
A method of fabricating a semiconductor device, the method comprising:
- forming a source region over a semiconductor substrate;
- forming a nanowire over the source region;
- forming a channel barrier layer over the nanowire;
- forming a drain region over the channel barrier layer;
- and
- forming a gate stack around the nanowire,
- wherein the nanowire and the channel barrier layer are made of different materials, and a bandgap of the nanowire and a bandgap of the channel barrier layer are different,
- wherein the bandgap of the channel barrier layer is greater than the bandgap of the nanowire,
- wherein the source region and the drain region are doped with different type, and
- wherein the method further comprises
- forming a first spacer covering a top surface of the gate stack and the drain region;
- and
- patterning the first spacer such that sidewalls of the first spacer are aligned with sidewalls of the gate stack.
Dependencies are inferred from the claim text.