Self-aligned contact for vertical field effect transistor
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Steven Bentley, Su Chen Fan, Balasubramanian Pranatharthiharan, Junli Wang, Ruilong Xie
Life of this patent
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Abstract
Embodiments of the invention are directed to a method and resulting structures for a semiconductor device having self-aligned contacts. In a non-limiting embodiment of the invention, a semiconductor fin is formed vertically extending from a bottom source/drain region of a substrate. A conductive gate is formed over a channel region of the semiconductor fin. A top source/drain region is formed on a surface of the semiconductor fin and a top metallization layer is formed on the top source/drain region. A dielectric cap is formed over the top metallization layer.
Claims8
A semiconductor device comprising:
- a semiconductor fin vertically extending from a bottom source/drain region of a substrate;
- a conductive gate formed over a channel region of the semiconductor fin;
- a top source/drain region on a surface of the semiconductor fin;
- a top metallization layer on the top source/drain region;
- a dielectric cap over the top metallization layer;
- and
- a bottom source/drain contact over the dielectric cap and on a portion of the bottom source/drain region, wherein a portion of the dielectric cap is between the bottom source/drain contact and the top metallization layer.
A semiconductor device comprising:
- a semiconductor fin vertically extending from a bottom source/drain region of a substrate;
- a conductive gate formed over a channel region of the semiconductor fin;
- a top source/drain region on a surface of the semiconductor fin;
- a top metallization layer on the top source/drain region;
- a dielectric cap over the top metallization layer;
- and
- a gate contact formed over the dielectric cap and on a portion of the conductive gate, wherein a portion of the dielectric cap is between the gate contact and the top metallization layer.
Dependencies are inferred from the claim text.