US 10,896,971 B2 · Vertical transistor with body contact fabrication

Abstract

A method for manufacturing a semiconductor device includes forming a fin on a semiconductor substrate, and forming a bottom source/drain region adjacent a base of the fin. In the method, a dielectric layer, a work function metal layer and a first gate metal layer are sequentially deposited on the bottom source/drain region and around the fin. The dielectric layer, the work function metal layer and the first gate metal layer form a gate structure. The method also includes removing the dielectric layer, the work function metal layer and the first gate metal layer from an end portion of the fin, and depositing a second gate metal layer around the end portion of the fin in place of the removed dielectric layer, the removed work function metal layer and the removed first gate metal layer. The second gate metal layer contacts the end portion of the fin.

Claims16

Dependent claims

A method for manufacturing a semiconductor device, comprising:

forming a fin on a semiconductor substrate;
forming a bottom source/drain region adjacent a base of the fin;
sequentially depositing a dielectric layer, a work function metal layer and a first gate metal layer on the bottom source/drain region and around the fin, wherein the dielectric layer, the work function metal layer and the first gate metal layer form a gate structure;
removing the dielectric layer, the work function metal layer and the first gate metal layer from an end portion of the fin;
and
depositing a second gate metal layer around the end portion of the fin in place of the removed dielectric layer, the removed work function metal layer and the removed first gate metal layer, wherein the second gate metal layer contacts the end portion of the fin.

3 more elements

Dependencies are inferred from the claim text.

Vertical transistor with body contact fabrication

Life of this patent

Vertical transistor with body contact fabrication

Life of this patent

Abstract

Claims16