Process of forming high electron mobility transistor (HEMT) and HEMT formed by the same
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsTadashi Watanabe, Hajime Matsuda
Life of this patent
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Abstract
A process of forming a field effect transistor (FET) of a type of high electron mobility transistor (HEMT) reducing damages caused in a semiconductor layer is disclosed. The process carries out steps of: (a) depositing an insulating film on a semiconductor stack; (b) depositing a conductive film on the insulating film; (c) forming an opening in the conductive film and the insulating film by a dry-etching using ions of reactive gas to expose a surface of the semiconductor stack; and (d) forming a gate electrode to be in contact with the surface of the semiconductor stack through the opening, the gate electrode filling the opening in the conductive film and the insulating film.
Claims12
A process of forming a field effect transistor (FET) of a type of high electron mobility transistor (HEMT), comprising steps of:
- depositing an insulating film on a semiconductor stack;
- depositing a conductive film on the insulating film;
- forming an opening in the conductive film and the insulating film by a dry-etching using ions of reactive gas to expose a surface of the semiconductor stack;
- and
- forming a gate electrode to be in contact with the surface of the semiconductor stack through the opening, the gate electrode filling the opening in the conductive film and the insulating film.
Dependencies are inferred from the claim text.