Device structure and manufacturing method using HDP deposited source-body implant block

A trenched semiconductor power device comprising a plurality of trenched gates, opened from a top surface of a semiconductor substrate and each padded with a gate oxide layer, wherein each of the trenched gates is surrounded by a source region encompassed in a body region near said top surface, wherein said semiconductor power device further comprising:

• an implanting-ion block comprises a thick oxide layer disposed on said top surface above a mesa area next to said body region between and extended laterally to a distance away from two adjacent trenched gates wherein the implanting ion block having a thickness significant greater than the gate oxide layer thus implanting separate body regions as separated floating regions;
• and
• a drain region disposed near a bottom surface of the semiconductor substrate.