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US 10,896,960 B2Granted
Silicon carbide MOSFET inverter circuit
AssigneeFuji Electric Co., Ltd.
InventorTakumi Fujimoto
Life of this patent
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Abstract
An inverter circuit is connected serially with a first silicon carbide MOSFET and a second silicon carbide MOSFET. During a dead time when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF, transient current of at least 100 A/cm2 flows in a built-in diode of the first silicon carbide MOSFET and a built-in diode of the second silicon carbide MOSFET.
Claims14
A silicon carbide MOSFET inverter circuit comprising:
- a first silicon carbide MOSFET;
- a second silicon carbide MOSFET connected serially with the first silicon carbide MOSFET;
- a first diode connected in reverse parallel to the first silicon carbide MOSFET;
- a second diode connected in reverse parallel to the second silicon carbide MOSFET;
- a first parasitic diode included in the first silicon carbide MOSFET;
- and
- a second parasitic diode included in the second silicon carbide MOSFET, wherein
- a forward voltage of the first parasitic diode and a forward voltage of the first diode are configured so that a peak current of the first parasitic diode is at least 100 A/cm2, and
- a forward voltage of the second parasitic diode and a forward voltage of the second diode are configured so that a peak current of the second parasitic diode is at least 100 A/cm2.
6 more elements
A silicon carbide MOSFET inverter circuit, comprising:
- a first silicon carbide MOSFET;
- and
- a second silicon carbide MOSFET connected serially with the first silicon carbide MOSFET, wherein
- the first silicon carbide MOSFET includes a first built-in diode and the second silicon carbide MOSFET includes a second built-in diode, the first built-in diode and the second built-in diode being configured to, during a dead time when the first silicon carbide MOSFET and the second silicon carbide MOSFET are both OFF at a same time, have a transient current flow in the first built-in diode and in the second built-in diode such that the transient current causes light to be emitted from the first built-in diode and the second built-in diode, and the light releases holes present at an interface of an oxide film and a silicon carbide layer of the first silicon carbide MOSFET and at an interface of an oxide film and a silicon carbide layer of the second silicon carbide MOSFET.
1 more element
Dependencies are inferred from the claim text.