Silicon-on-insulator backside contacts
AssigneeQUALCOMM Incorporated
InventorsSinan Goktepeli, George Pete Imthurn, Yun Han Chu, Qingqing Liang
Life of this patent
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Abstract
In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.
Claims10
A method, comprising
- providing an SOI wafer having a back insulating layer and one or more MOSFETs each having a diffusion region as source or drain, wherein the diffusion region has a front diffusion side and a back diffusion side;
- forming a recess in a selected recess area in the diffusion region from the front diffusion side;
- forming a silicide layer in the diffusion region from the front diffusion side and the recess, wherein the silicide layer has a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side, and wherein the back silicide side touches the back insulating layer under the selected recess area;
- forming a contact opening in the back insulating layer;
- and
- forming a backside contact in the contact opening, wherein the backside contact connects to the silicide layer under the selected recess area by the back silicide side.
A method, comprising
- providing an SOI wafer having a back insulating layer, one or more MOSFETs each having a diffusion region as source or drain of the MOSFET, and a shallow trench isolation opening adjacent to the diffusion region, wherein the diffusion region has a front diffusion side, a back diffusion side, and a sidewall, wherein the sidewall is also a sidewall of the shallow trench isolation opening;
- forming a silicide layer in the diffusion region from the front diffusion side and the sidewall, wherein the silicide layer touches the back insulating layer by the sidewall;
- forming a contact opening in the back insulating layer;
- and
- forming a backside contact in the contact opening, wherein the backside contacts connects to the silicide layer by the sidewall.
Dependencies are inferred from the claim text.