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US 10,896,953 B2Granted
Diode structures
AssigneeGlobalfoundries Inc.
InventorsJagar Singh, Shiv Kumar Mishra
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to high voltage diode structures and methods of manufacture. The structure includes: a diode structure composed of first well of a first dopant type in a substrate; and a well ring structure of the first dopant type in the substrate which completely surrounds the first well of the first dopant type, and spaced a distance “x” from the first well to cut a leakage path to a shallower second well of a second dopant type.
Claims19
A structure comprising:
- a diode structure composed of first well of a first dopant type in a substrate;
- and
- a well ring structure of the first dopant type in the substrate which completely surrounds the first well of the first dopant type, and spaced a distance “x” from the first well to cut a leakage path to a shallower second well of a second dopant type, wherein
- the first dopant type is an N-type dopant, and
- wherein the well ring structure is a plurality of N-type well ring structures completely surrounding the first well of the first dopant type.
2 more elements
A diode structure comprising:
- a first N-well in a substrate;
- a N+ contact over the first N-well;
- shallow trench isolation regions surrounding the first N-well and the N+ contact;
- an N-type ring structure in the substrate which completely surrounds the first N-well and the N+ contact, the N-type ring structure being spaced a distance “x” from the first N-well;
- and
- a P-type well in the substrate,
- wherein the first N-well is composed of a deep well implant, an N-well implant and the N+ contact and the N-type ring structure includes a deep well implant.
4 more elements
A diode structure comprising:
- a deep N-well in a substrate;
- an N-well in the substrate located over the deep N-well;
- a N+ contact in the substrate located over the first N-well;
- shallow trench isolation regions surrounding the N-well and the N+ contact;
- an N-type ring structure in the substrate which completely surrounds the first N-well and the N+ contact and the deep N-well, the N-type ring structure being spaced a distance “x” from the deep N-well;
- a P-type well in the substrate;
- gate structures over the N+ contact,
- wherein the distance “x” varies between 50 nm to 2 microns.
5 more elements
Dependencies are inferred from the claim text.