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US 10,896,950 B2Granted
Method and apparatus for a thin film dielectric stack
AssigneeNXP USA, Inc.
InventorsMarina Zelner, Andrew Vladimir Claude Cervin, Edward Horne
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Abstract
A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.
Claims20
A method for fabricating a thin film capacitor, the method comprising:
- depositing an adhesion layer on a silicon dioxide layer of a silicon substrate, wherein the adhesion layer comprises a polar dielectric selected from a family of niobate, and silicate or a mixture thereof, and wherein the adhesion layer is not any thin film of Ti, Ta, TiOx and TaOx;
- depositing another adhesion layer on the adhesion layer, the another adhesion layer comprising one of Ti or TiOx;
- depositing a first electrode layer on the another adhesion layer;
- depositing a dielectric layer on the first electrode layer;
- depositing a second electrode layer on the dielectric layer;
- and
- providing a connection for the first electrode layer, the second electrode layer, or both, wherein the another adhesion layer comprises a thin film, wherein the adhesion layer is poly-crystalline, and wherein the adhesion layer is between 50 to 500 Angstroms thick.
4 more elements
A method for fabricating a thin film capacitor, the method comprising:
- depositing a first adhesion layer on a silicon dioxide layer of a silicon substrate, wherein the first adhesion layer comprises a polar dielectric selected from a family of niobate, and silicate or a mixture thereof, and wherein the first adhesion layer is not any thin film of Ti, Ta, TiOx and TaOx;
- depositing a second adhesion layer on the first adhesion layer, the second adhesion layer comprising one of Ti or TiOx;
- depositing a first electrode layer on the second adhesion layer;
- depositing a dielectric layer on the first electrode layer;
- depositing a second electrode layer on the dielectric layer;
- providing a connection for the first electrode layer, the second electrode layer, or both, wherein the depositing of the dielectric layer further comprises:
- depositing a first dielectric layer on the first electrode layer utilizing a first process that is performed at a first temperature;
- depositing a second dielectric layer on the first dielectric layer utilizing a second process that is performed at a second temperature higher than the first temperature;
- and
- performing a crystallization annealing at a third temperature, wherein the another adhesion layer comprises a thin film, wherein the adhesion layer is poly-crystalline, and wherein the adhesion layer is between 50 to 500 Angstroms thick.
7 more elements
A method for fabricating a thin film capacitor, the method comprising:
- depositing an adhesion layer on a silicon dioxide layer of a silicon substrate, wherein the adhesion layer comprises a polar dielectric selected from a family of niobate, and silicate or a mixture thereof and wherein the adhesion layer is not any thin film of Ti, Ta, TiOx and TaOx;
- depositing another adhesion layer on the adhesion layer, the another adhesion layer comprising one of Ti or TiOx;
- depositing a first electrode layer on the another adhesion layer;
- depositing a first dielectric layer on the first electrode layer, wherein the first dielectric layer has a columnar-oriented grain structure;
- depositing a group of second dielectric layers stacked on the first dielectric layer to obtain a dielectric stack, wherein each of the group of second dielectric layers has a randomly-oriented grain structure, wherein at least one of the group of second dielectric layers is formed from a different material from at least one other of the group of second dielectric layers;
- depositing a second electrode layer on the group of second dielectric layers, wherein the dielectric stack extends between the first electrode layer and the second electrode layer;
- providing a connection for the first electrode layer, the second electrode layer, or both;
- depositing the first dielectric layer on the first electrode layer utilizing a first process that is performed at a first temperature;
- depositing one of the group of second dielectric layers on the first dielectric layer utilizing a second process, comprising:
- performing a first annealing at a second temperature that is higher than the first temperature;
- and
- repeating the depositing and first annealing of another of the group of second dielectric layers until a desired thickness of the dielectric stack is obtained;
- and
- performing a crystallization annealing at a third temperature, wherein the another adhesion layer comprises a thin film, wherein the adhesion layer is poly-crystalline, and wherein the adhesion layer is between 50 to 500 Angstroms thick.
11 more elements
Dependencies are inferred from the claim text.