3D semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsDeepak C. Sekar, Zvi Or-Bach
Life of this patent
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Abstract
A 3D semiconductor device, the device including: a first level including a first single crystal layer and first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer and second transistors, where the second level overlays the first level, where the second transistors are horizontally oriented and each include at least two side gates, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonds.
Claims20
A 3D semiconductor device, the device comprising:
- a first level comprising a first single crystal layer and first transistors,
- wherein said first transistors each comprise a single crystal channel;
- first metal layers interconnecting at least said first transistors;
- and
- a second level comprising a second single crystal layer and second transistors,
- wherein said second level overlays said first level,
- wherein said second transistors are horizontally oriented and each comprise at least two side gates,
- wherein said second level is bonded to said first level, and
- wherein said bonded comprises oxide to oxide bonds.
A 3D semiconductor device, the device comprising:
- a first level comprising a first single crystal layer and alignment marks;
- first transistors overlaying said first single crystal layer;
- second transistors overlaying said first transistors;
- and
- a second level comprising a second single crystal layer,
- wherein said second level overlays said second transistors,
- wherein said first transistors and said second transistors are self-aligned, being processed following the same lithography step,
- wherein said second level comprises third transistors, and
- wherein said third transistors are aligned to said alignment marks.
A 3D semiconductor device, the device comprising:
- a first level comprising a first single crystal layer and first transistors,
- wherein said first transistors each comprise a single crystal channel;
- first metal layers interconnecting at least said first transistors;
- alignment marks,
- wherein said first level comprises said alignment marks;
- and
- a second level comprising a second single crystal layer and second transistors,
- wherein said second level overlays said first level,
- wherein said second transistors are horizontally oriented and each comprise at least two side gates,
- wherein said second level is bonded to said first level,
- wherein said bonded comprises oxide to oxide bonds, and
- wherein said second transistors are aligned to said alignment marks.
Dependencies are inferred from the claim text.