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US 10,896,930 B2Granted
Memory including a selector switch on a variable resistance memory cell
AssigneeMicron Technology, Inc.
InventorsAndrea Redaelli, Agostino Pirovano
Life of this patent
Estimating the term…
Abstract
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
Claims19
A method comprising:
- forming a sealing material on at least a sidewall of a selector switch and at least a sidewall of a memory cell, wherein the sealing material is formed after the memory cell and the selector switch;
- and
- forming a conductive plug in contact with and disposed on at least a portion of a surface of the sealing material.
A memory array, comprising:
- a plurality of memory cells that are each coupled with a corresponding bit line and a corresponding word line;
- a plurality of selector switches that are each in contact with a corresponding memory cell of the plurality;
- a sealing material in contact with a pair of sidewalls of each of the selector switches, an upper surface of each of the memory cells, and a pair of sidewalls of each of the memory cells;
- and
- a plurality of conductive plugs that are each in contact with a corresponding memory cell of the plurality.
2 more elements
A method for forming a memory device, comprising:
- forming a sealing material on a pair of sidewalls of a selector switch and a pair of sidewalls of a memory cell, wherein the sealing material is formed after the memory cell and the selector switch;
- and
- forming a conductive plug in contact with and disposed on at least a portion of a surface of the sealing material.
Dependencies are inferred from the claim text.