A self-powered integrated circuit component, comprising:
- an integrated circuit element provided on a substrate;
- and
- an energy harvesting component formed on the substrate, comprising
- a first conductor layer formed of a first conductive material on the substrate, a facing surface of the first conductor layer being surface conditioned to have a comparatively low work function value;
- and
- a second conductor layer formed of a second conductive material arranged such that a facing surface of the second conductor layer faces the facing surface of the first conductor layer with a gap formed between respective facing surfaces of the first conductor layer and the second conductor layer, the gap being in a range of 100 angstroms or less in thickness in a direction orthogonal to the respective facing surfaces, the facing surface of the second conductor having a work function value at least 1.0 eV higher than the comparatively low work function value of the facing surface of the first conductor layer,
- the energy harvesting component having a stacked configuration on the substrate totaling less than 100 μm thick,
- the energy harvesting component being electrically connected to the integrated circuit element, and
- the energy harvesting component being configured to generate and electric potential at any temperature above absolute zero for powering the integrated circuit element.