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US 10,896,924 B2Granted
Solid-state imaging device, manufacturing method thereof, and camera with alternatively arranged pixel combinations
AssigneeSony Semiconductor Solutions Corporation
InventorsHiroaki Ishiwata, Sanghoon Ha
Life of this patent
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Abstract
A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.
Claims17
A light detecting device, comprising:
- a first pixel unit, comprising:
- first, second, third, and fourth photoelectric conversion regions;
- first, second, third, and fourth color filters corresponding to the first, second, third, and fourth photoelectric conversion regions, respectively;
- and
- first, second, third, and fourth on-chip lenses corresponding to the first, second, third, and fourth photoelectric conversion regions, respectively;
- and
- a second pixel unit comprising:
- fifth, sixth, seventh, and eighth photoelectric conversion regions;
- a single fifth color filter corresponding to the fifth, sixth, seventh, and eighth photoelectric conversion regions;
- and
- a single fifth on-chip lens corresponding to the fifth, sixth, seventh, and eighth photoelectric conversion regions.
8 more elements
Dependencies are inferred from the claim text.