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AssigneeIntel Corporation
InventorsPatrick H. Keys, Hei Kam, Rishabh Mehandru, Aaron A. Budrevich
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A transistor including a gate stack and source and drain on opposing sides of the gate stack; and a first material and a second material on the substrate, the first material disposed between the substrate and the second material and the channel of the transistor is defined in the second material between the source and drain, wherein the first material and the second material each include an implant and the implant includes a greater solubility in the first material than in the second material. A method for forming an integrated circuit structure including forming a first material on a substrate; forming a second material on the first material; introducing an implant into the second material, wherein the implant includes a greater solubility in the first material than in the second material; annealing the substrate; and forming a transistor on the substrate, the transistor including a channel including the second material.
A transistor comprising:
An integrated circuit structure comprising:
A method for forming an integrated circuit structure comprising:
Dependencies are inferred from the claim text.