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US 10,896,896 B2Granted
Semiconductor device comprising PN junction diode and schottky barrier diode
AssigneeRohm Co., Ltd.
InventorKeiji Okumura
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.
Claims21
A semiconductor device comprising:
- an insulating substrate;
- a first conductive wiring provided on the insulating substrate;
- a second conductive wiring provided on the insulating substrate and separated from the first conductive wiring;
- a third conductive wiring provided on the insulating substrate and separated from the first and second conductive wirings, the second and third conductive wirings being arranged on the insulating substrate with the first conductive wiring interposed therebetween;
- a MOSFET made of a semiconducting material that chiefly includes SiC, the MOSFET including a PN junction diode having a cathode connected to the first conductive wiring;
- a diode having an operating voltage lower than an operating voltage of the PN junction diode, the diode having a cathode connected to the first conductive wiring;
- a first bonding wire that connects an anode of the PN junction diode to the second conductive wiring;
- a second bonding wire that connects an anode of the diode to the second conductive wiring;
- and
- a third bonding wire that connects a gate of the MOSFET to the third conductive wiring,
- wherein the first bonding wire and the second bonding wire are configured such that when a voltage equal to or higher than the operating voltage of the diode is applied to the diode, a voltage equal to or higher than the operating voltage of the PN junction diode is not applied to the PN junction diode, thereby no current flowing through the PN junction diode.
8 more elements
A semiconductor device comprising:
- an insulating substrate;
- a first conductive wiring provided on the insulating substrate;
- a second conductive wiring provided on the insulating substrate and separated from the first conductive wiring;
- a MOSFET made of a semiconducting material that chiefly includes SiC, the MOSFET including a PN junction diode having a cathode connected to the first conductive wiring;
- a diode having an operating voltage lower than an operating voltage of the PN junction diode, the diode having a cathode connected to the first conductive wiring;
- a first connection metal member that connects an anode of the PN junction diode to the second conductive wiring;
- and
- a second connection metal member that connects an anode of the diode to the second conductive wiring,
- wherein the first connection metal member and the second connection metal member are configured such that when a voltage equal to or higher than the operating voltage of the diode is applied to the diode, a voltage equal to or higher than the operating voltage of the PN junction diode is not applied to the PN junction diode, thereby no current flowing through the PN junction diode.
6 more elements
A semiconductor device comprising:
- an insulating substrate;
- a first conductive wiring provided on the insulating substrate;
- a second conductive wiring provided on the insulating substrate and separated from the first conductive wiring;
- a third conductive wiring provided on the insulating substrate and separated from the first and second conductive wirings, the second and third conductive wirings being arranged on the insulating substrate with the first conductive wiring interposed therebetween;
- a MOSFET made of a semiconducting material that chiefly includes SiC, the MOSFET including a PN junction diode having a cathode connected to the first conductive wiring;
- a diode having an operating voltage lower than an operating voltage of the PN junction diode, the diode having a cathode connected to the first conductive wiring;
- a first bonding wire that connects an anode of the PN junction diode to the second conductive wiring;
- a second bonding wire that connects an anode of the diode to the second conductive wiring;
- and
- a third bonding wire that connects a gate of the MOSFET to the third conductive wiring,
- wherein at least one of respective lengths, respective diameters and respective loop angles of the first bonding wire and the second bonding wire are adjusted such that when a voltage equal to or higher than the operating voltage of the diode is applied to the diode, a voltage equal to or higher than the operating voltage of the PN junction diode is not applied to the PN junction diode, thereby no current flowing through the PN junction diode.
8 more elements
Dependencies are inferred from the claim text.