Forming conductive plugs for memory device
AssigneeMicron Technology, Inc.
InventorShiro Uchiyama
Life of this patent
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Abstract
Apparatuses and methods with conductive plugs for a memory device are described. An example method includes: forming a plurality of shallow trench isolations elongating from a first surface of a semiconductor substrate toward a second surface of the semiconductor substrate; thinning the semiconductor substrate until first surfaces of the plurality of shallow trench isolations are exposed; forming a plurality of via holes, each via hole of the plurality of via holes through a corresponding one of the plurality of shallow trench isolations; and filling the plurality of via holes with a conductive material to form a plurality of conductive plugs.
Claims21
An apparatus comprising:
- a substrate including a first region and a second region;
- a conductive plug disposed through the second region;
- and
- a plurality of trenches in the first region, wherein the conductive plug is separated from adjacent ones of the plurality of trenches by a first width, and
- wherein each of the plurality of trenches is separated from adjacent others of the plurality of trenches by a second width which is smaller than the first width.
An apparatus comprising:
- a substrate including a memory mat cell region and a peripheral region;
- a peripheral shallow trench isolation (STI) region disposed in the peripheral region, wherein the peripheral STI region includes a through-dielectric via (TDV) region;
- and
- a conductive plug positioned in the TDV region,
- wherein the TDV region has a first area, and wherein the peripheral STI region outside the TDV region has a second area smaller than the first area.
An apparatus comprising:
- a stacked chip package including a plurality of chips, each of the plurality of chips comprising:
- a through-dielectric via (TDV) configured to couple the chip to adjacent ones of the plurality of chips;
- a peripheral TDV region surrounding the TDV;
- and
- a plurality of trenches surrounding the peripheral TDV region,
- wherein the distance from an edge of the TDV to the plurality of trenches is greater than a distance between adjacent ones of the plurality of trenches.
Dependencies are inferred from the claim text.