Power semiconductor chip module
AssigneeHs Elektronik System GmbH
InventorsRichard Sinning, Bernd Loefflad, Markus Greither, Peter Brantl, Josef Maier, Rainer Seidel
Life of this patent
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Abstract
The present invention relates to a power semiconductor chip module, comprising a substrate having a top side and a bottom side; at least one first power semiconductor device attached to the top side of the substrate; at least one first conductive structure thermally and electrically connecting the first power semiconductor device to the top side of the substrate; at least one second power semiconductor device attached to the bottom side of the substrate; and at least one second conductive structure connecting the second power semiconductor device to the bottom side of the substrate.
Claims12
A power semiconductor chip module, comprising
- a printed circuit board having a top side and a bottom side, each of the top side and the bottom sides being provided with top and bottom contact pads;
- at least one first power semiconductor device attached by chip-on-board technology to the top side of the printed circuit board in a leadless manner;
- at least one first conductive structure thermally and electrically connecting the at least one first power semiconductor device to a respective one of the top contact pads on the top side of the printed circuit board;
- at least one second power semiconductor device attached by chip-on-board technology to the bottom side of the printed circuit board in a leadless manner;
- and
- at least one second conductive structure thermally and electrically connecting the at least one second power semiconductor device to a respective one of the bottom contact pads on the bottom side of the printed circuit board;
- wherein the at least one first and the at least one second conductive structures comprise a respective first contact region and second contact region in contact with the printed circuit board, respectively, the first contact region having a first conductive contact layer in contact with an adjacent side of the at least one first semiconductor device and the top side of the printed circuit board, the second contact region having a second conductive contact layer in contact with an adjacent side of the at least one second power semiconductor device and the bottom side of the printed circuit board,
- wherein each of the first and second conductive contact layers covers the area of the respective adjacent side of the at least one first and second power semiconductor device, and
- wherein each of the first and second conductive contact layers is made of an electrically and thermally conductive material,
- wherein each of the at least one first and second conductive structures comprises at least one heavy wire bond for contacting an opposite side of the first and second power semiconductor devices to the top or bottom side of the printed circuit board, respectively, the heavy wire bond comprising at least one bond wire with a wire diameter of 100 to 500 μm, and
- wherein each of the first and second power semiconductor devices is embedded in a potting of electrically isolating material, each of the pottings having the configuration of a globtop.
The power semiconductor chip module according to 1, wherein the wire diameter of the at least one bond wire of the heavy wire bond is 300 to 500 μm.
Dependencies are inferred from the claim text.