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AssigneeTokyo Electron Limited
InventorsWataru Yoshikawa, Kazuki Moyama, Nobuyuki Okayama, Kenji Sudou, Yasuhiro Otsuka
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A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.
A manufacturing method of sample table which holds a substrate to be processed, the manufacturing method comprising:
A manufacturing method of microwave plasma processing apparatus comprising a sample table which holds a substrate to be processed, and configured to generate plasma in a processing chamber by using microwaves and to perform a plasma process on the substrate by using the plasma, wherein the manufacturing method comprising:
Dependencies are inferred from the claim text.