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US 10,896,821 B2Granted
Asymmetric wafer bow compensation by physical vapor deposition
AssigneeLam Research Corporation
InventorChanyuan Liu
Life of this patent
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Abstract
Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by physical vapor deposition on the backside of the bowed semiconductor substrate in regions to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve sputtering material onto a backside of a substrate using a shadow mask or by using more than one target and rotating the semiconductor substrate being sputtering operations.
Claims18
A method comprising:
- providing a bowed semiconductor substrate having a first tensile region and a first compressive region;
- aligning the bowed semiconductor substrate such that the first tensile region and the first compressive region are aligned with a target for sputtering a second tensile region and a second compressive region, respectively, to a backside of the bowed semiconductor substrate;
- and
- mitigating bowing of the bowed semiconductor substrate by sputtering a bow compensation layer on the backside of the bowed semiconductor substrate by physical vapor deposition, the bow compensation layer comprising the second tensile region and the second compressive region.
1 more element
Dependencies are inferred from the claim text.