Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process

A method of depositing a ruthenium-containing film on a substrate by a cyclical deposition process, the method comprising:

• contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor having direct metal-carbon bonds and comprising a metal selected from the group consisting of cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof;
• and
• contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4);
• wherein the ruthenium-containing film comprises a ruthenium-metal alloy, wherein a ruthenium content of the ruthenium-metal alloy is greater than 75 atomic % and wherein contacting the substrate with the first vapor phase reactant and contacting the substrate with the second vapor phase reactant comprise forming a barrier layer on a surface of a trench formed in a dielectric material;
• depositing a metal interconnect material onto the barrier material with the trench;
• and
• after depositing the metal interconnect material, contacting the substrate again with the first vapor phase reactant and contacting the substrate again with the second vapor phase reactant to form a capping layer disposed directly on an upper surface of the metal interconnect material.