Semiconductor substrate singulation systems and related methods

A method of forming semiconductor substrates, the method comprising:

• providing a boule comprising a semiconductor material having a first surface thereon;
• inducing damage into a portion of the boule at a first depth into the boule from the first surface forming a first damage layer;
• inducing damage into a portion of the boule at a second depth into the boule from the first surface forming a second damage layer;
• applying ultrasonic energy to the boule;
• and
• separating semiconductor substrates from the boule along the first damage layer and along the second damage layer using only the ultrasonic energy.

A method of thinning a semiconductor substrate for reuse, the method comprising:

• providing a semiconductor substrate comprising a first surface and a second surface opposing the first surface, the semiconductor substrate having a thickness between the first surface and the second surface, the first surface including a plurality of semiconductor devices thereon;
• inducing damage into a portion of the semiconductor substrate at a depth into the thickness forming a damage layer;
• applying ultrasonic energy to the semiconductor substrate;
• separating the semiconductor substrate into two thinned portions across the thickness along the first damage layer using only the ultrasonic energy, a first one of the two thinned portions comprising the plurality of semiconductor devices;
• and
• forming one or more semiconductor devices on a second one of the two thinned portions.