Methods for rapid electron area masking (REAM) lithography
AssigneeGary William Leach
InventorsGary William Leach, Finlay Charles Henry MacNab
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Abstract
A method for electron beam lithography. The method may comprise fabricating a multi-layer mask and interposing the multi-layer mask between an electron beam and an energy-sensitive layer to thereby expose the energy-sensitive layer to the electron beam through the mask. Fabricating the multi-layer mask may comprises providing a first mask layer fabricated from a first mask material (e.g. silicon nitride) which defines one or more feature apertures corresponding to features of interest and coating an electron-energy-reducing material (e.g. gold) onto the first mask layer to thereby provide a second mask layer.
Claims20
A method for electron beam lithography, the method comprising:
- fabricating a multi-layer mask;
- and
- interposing the multi-layer mask between an electron beam and an energy-sensitive layer to thereby expose the enemy-sensitive layer to the electron beam through the mask;
- wherein fabricating the multi-layer mask comprises:
- providing a first mask layer fabricated from a first mask material which defines one or more feature apertures corresponding to features of interest;
- and coating an electron-energy-reducing material onto the first mask layer to thereby provide a second mask layer,
- wherein the first mask layer is fabricated from a material with residual stress in the range of −1.0 GPa to 1.0 GPa.
A method for electron beam lithography, the method comprising:
- fabricating a multi-layer mask;
- and
- interposing the multi-layer mask between an electron beam and an energy-sensitive layer to thereby expose the energy-sensitive layer to the electron beam through the mask;
- wherein fabricating the multi-layer mask comprises:
- providing a first mask layer fabricated from a first mask material which defines one or more feature apertures corresponding to features of interest;
- and coating an electron-enemy-reducing material onto the first mask layer to thereby provide a second mask layer,
- wherein the first mask layer is fabricated from a first material with residual stress in the range of −1.5 GPa to 0 GPa and a second material with residual stress in the range of 0 GPa to 1.5 GPa.
A method of fabricating a photovoltaic device, the method comprising:
- fabricating a plasmonic metal surface comprising a film and a plurality of plasmonic absorbing elements extending from a surface of the film using a method comprising:
- fabricating a multi-layer mask;
- and
- interposing the multi-layer mask between an electron beam and an energy sensitive layer to thereby expose the energy-sensitive layer to the electron beam through the mask;
- wherein fabricating the multi-layer mask comprises:
- providing a first mask layer fabricated from a first mask material which defines one or more feature apertures corresponding to features of interest;
- and coating an electron-energy-reducing material onto the first mask layer to thereby provide a second mask layer;
- fabricating an overlayer over the plasmonic metal surface, the overlayer comprising a p-doped layer and an n-doped layer;
- and
- fabricating a top contact over the overlayer.
Dependencies are inferred from the claim text.