Contact in RF-switch

A method of fabricating a MEMS device, comprising:

• depositing an insulating layer over a substrate, the substrate having a plurality of electrodes formed therein, wherein the plurality of electrodes includes at least an anchor electrode, a pull-in electrode and an RF electrode;
• removing at least a portion of the insulating layer to form a first opening that exposes at least a portion of the anchor electrode and to form a second opening that exposes at least a portion of the RF electrode;
• depositing a contact layer over the insulating layer and within the first opening on the anchor electrode and within the second opening on the RF electrode;
• removing a portion of the contact layer, wherein a first portion of the contact layer remains within the first opening on the anchor electrode such that a width of the first portion of the contact layer is less than a width of the first opening and wherein a second portion of the contact layer remains within the second opening on the RF electrode;
• and
• forming a switching element over the substrate, wherein the switching element includes an anchor portion that is coupled to the first portion of the contact layer, wherein the switching element also includes a leg portion and a bridge portion, wherein the switching element is movable from a first position spaced from the second portion of the contact layer and a second position in contact with the second portion of the contact layer.

A MEMS device, comprising:

• a substrate having a plurality of electrodes formed therein, wherein the plurality of electrodes includes at least an anchor electrode, a pull-down electrode and an RF electrode;
• an insulating layer disposed over the substrate and the plurality of electrodes, wherein the insulating layer has a first opening formed therethrough to expose the anchor electrode and a second opening formed therethrough to expose the RF electrode;
• a contact layer that is electrically conductive, wherein the contact layer includes a first portion disposed within the first opening and in contact with the anchor electrode, and a second portion disposed within the second opening and in contact with the RF electrode;
• and
• a switching element disposed over the insulating layer, wherein the switching element includes an anchor portion in contact with the first portion of the contact layer, a leg portion and a bridge portion and wherein the bridge portion is movable from a first position spaced from the second portion of the contact layer and a second position in contact with the second portion of the contact layer;
• wherein the anchor electrode has a first height at a location adjacent the first portion of the contact layer, a second height at a location in contact with the first portion of the contact layer and a third height at a location in contact with the insulating layer wherein the first height is less than the second height and the third height.