D-MRAM devices and methods for replicating data and read and write operations

A dynamic-magneto random access memory (D-MRAM) bit-cell device comprising:

• a first access device;
• a selector;
• a storage capacitor;
• and
• a magneto-electric magnetic tunnel junction (ME-MTJ) configured to replicate data stored in the storage capacitor, wherein:
• the ME-MTJ further comprises first, second, and third terminals;
• the first terminal is coupled to the storage capacitor;
• the second terminal is coupled to a source line;
• and
• the third terminal is coupled to the selector.

A method of storing dynamic random-access memory (DRAM) data in respective magneto-electric magnetic tunnel junctions (ME-MTJ) of D-MRAM bit-cells of a D-MRAM bit-cell memory array, the method comprising:

• for each of the D-M RAM bit-cells:
• writing a first data value in a storage capacitor of the D-M RAM bit-cell;
• and
• in a first cycle, providing a first voltage to a source line coupled to a ME-MTJ, wherein in response to the storage capacitor storing the first data value, the ME-MTJ is configured to store the first data value if the first voltage generates a voltage difference between first and second terminals of the ME-MTJ.

A method of write operation of dynamic random-access memory (DRAM) data stored into a magneto-electric magnetic tunnel junction (ME-MTJ) of a dynamic-magneto random access memory (D-M RAM) bit-cell of a D-M RAM memory array, the method comprising:

• activating an access transistor of the D-M RAM bit-cell coupled to a storage capacitor and the ME-MTJ, wherein the access transistor is activated by:
• providing a first voltage to a word line coupled to the access transistor;
• providing the first voltage or a second voltage to a bit line coupled to the access transistor;
• in response to providing the first or the second voltages, charging or discharging the storage capacitor;
• and
• in response to providing the first or the second voltages to a source line coupled to the ME-MTJ, storing a data value corresponding to the first voltage in the ME-MTJ.

A method of read operation of data in respective ME-magneto tunnel junction (ME-MTJ) of a plurality of D-M RAM bit-cells in a DRAM memory array, each of the D-MRAM bit-cells having an access transistor, a selector, a storage capacitor, and the ME-MTJ, the method comprising:

• initiating the selector of the DRAM bit-cell, wherein the selector is initiated by:
• providing a voltage to a word line coupled to the selector;
• and
• determining a data value stored on the ME-MTJ coupled to the initiated selector, wherein the data value corresponds to pre-power down DRAM data, and wherein determining the data value comprises:
• sensing, by a sensing circuit, a read current or a read voltage on a source line coupled to ME-MTJ.