Method for reading a cross-point type memory array comprising a two-terminal switching material
OwnerJunsung Kiminventor
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Abstract
Provided is a method for reading a current for processing analog information in a memory array for a synaptic device. To this end, the method for reading the memory array including a two-terminal switching material, comprises (a) selecting at least one cell by applying a voltage to the memory array, and (b) simultaneously measuring the sum of currents from the at least one cell selected. The voltage applied to the at least one cell selected in operation (a) is higher than a voltage applied to at least one cell not selected while being within a range in which all of the selected at least one cell is not turned on.
Claims6
A method for reading a memory array for a synaptic device, the memory array including a two-terminal switching material, the method comprising:
- (a) selecting a plurality of first cells in the memory array by applying a first voltage to the memory array at a time;
- and
- (b) measuring a sum of currents flowing through the selected plurality of first cells,
- wherein the first voltage applied to the selected plurality of first cells is higher than a second voltage applied to one or more second cells which are unselected at the time of applying the first voltage to the memory array, while being within a range in which all of the plurality of first cells are not turned on.
Dependencies are inferred from the claim text.