Selective clock adjustment during read and/or write memory operations

A circuit, comprising:

• a first memory cell;
• a second memory cell that is dissimilar to the second memory cell;
• a clock-delay component having an output node coupled to the first memory cell and the second memory cell, wherein the clock-delay component is configured to adjust clock signals during writing to the first memory cell and adjust clock signals during reading from the second memory cell;
• and
• a temperature sensor to increase a clock-delay duration responsive to the temperature sensor measuring a temperature lower than a threshold value, wherein the temperature sensor has an output signal port coupled to an input port of the clock-delay component.

A circuit, comprising:

• a first memory cell;
• a second memory cell that is dissimilar to the second memory cell;
• and
• a clock-delay component having an output node coupled to the first memory cell and the second memory cell, wherein the clock-delay component is configured to adjust clock signals during writing to the first memory cell and adjust clock signals during reading from the second memory cell,
• wherein the clock-delay component is configured to provide an output signal to delay the clock signals during reading from the second memory cell.

A circuit, comprising:

• a first memory cell;
• a second memory cell that is dissimilar to the second memory cell;
• and
• a clock-delay component having an output node coupled to the first memory cell and the second memory cell, wherein the clock-delay component is configured to adjust clock signals during writing to the first memory cell and adjust clock signals during reading from the second memory cell,
• wherein the clock-delay component is configured to provide an output signal to delay the clock signals during writing to the first memory cell by two or more clock periods derived from a clock input node the circuit.

A circuit, comprising:

• a first memory cell;
• a second memory cell that is dissimilar to the second memory cell;
• a clock-delay component having an output node coupled to the first memory cell and the second memory cell, wherein the clock-delay component is configured to adjust clock signals during writing to the first memory cell and adjust clock signals during reading from the second memory cell;
• and
• one or more control signal inputs configured to set the delay of the clock signals during reading from the second memory cell.

A method of performing a memory operation, comprising:

• providing a magnetic random-access memory (MRAM) cell and a static random-access memory (SRAM) cell;
• receiving clock signals at an input node;
• determining whether the memory operation corresponds to writing to the MRAM cell or reading from the SRAM cell;
• and
• adjusting the clock signals by delaying the clock signals to an output node coupled to the MRAM cell and the SRAM cell so as to permit completion of the memory operation responsive to the determining.

A method of performing a memory operation, comprising:

• determining whether the memory operation corresponds to writing to a magnetic random-access memory (MRAM) cell or reading from a static random-access memory (SRAM) cell;
• delaying a clock signal to permit completion of the memory operation responsive to the determining;
• and
• obtaining a signal from a temperature sensor and determining a delay increment of the clock signal responsive to determining that the memory operation corresponds to writing to the MRAM cell.

A method of performing a memory operation, comprising:

• determining whether the memory operation corresponds to writing to a magnetic random-access memory (MRAM) cell or reading from a static random-access memory (SRAM) cell;
• delaying a clock signal to permit completion of the memory operation responsive to the determining;
• determining a delay increment of the clock signal responsive to determining that the memory operation corresponds to reading from the SRAM cell;
• and
• determining that a bit cell access voltage is lower than a threshold value.

A method of performing a memory operation, comprising:

• determining whether the memory operation corresponds to writing to a magnetic random-access memory (MRAM) cell or reading from a static random-access memory (SRAM) cell;
• delaying a clock signal to permit completion of the memory operation responsive to the determining;
• obtaining a signal from an error detection circuit, the signal from the error detection circuit to indicate that a previous writing operation to the MRAM cell has failed;
• and
• incrementing a delay of a subsequent clock signal responsive to the indication that the previous writing operation to the MRAM cell has failed.