FX driver circuit
AssigneeMicron Technology, Inc.
InventorsCharles L. Ingalls, Tae H. Kim
Life of this patent
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AssigneeMicron Technology, Inc.
InventorsCharles L. Ingalls, Tae H. Kim
Estimating the term…
A FX phase driver for a memory device having a first driver circuit including a first pull-up circuit configured to drive a first phase signal to a first high state value and a first pull-down circuit configured to drive the first phase signal to a first low state value. The phase driver also including a second driver circuit including a second pull-up circuit configured to drive a second phase signal to a second high state value that is higher than an active state voltage level of a word line in the memory device and a second pull-down circuit configured to drive the second phase signal to a second low state value. The second pull-down circuit includes a stabilization circuit configured to provide a resistive path for a leakage current in the second pull-down circuit when the second pull-up circuit drives the second phase signal to the second high state value.
A phase driver for a memory device, comprising:
An apparatus, comprising:
Dependencies are inferred from the claim text.