Electronic device and method for driving the same
AssigneeSK hynix Inc.
InventorsSeok-Man Hong, Tae-Hoon Kim
Life of this patent
Estimating the term…
Abstract
An electronic device includes a semiconductor memory. The semiconductor memory may include: a memory circuit comprising a plurality of memory cells; a read circuit configured to generate a first read data signal by reading data from a read target memory cell according to a first read control signal, the read target memory cell being among the plurality of memory cells; and a control circuit configured to control the read circuit to reread the data from the read target memory cell by generating a second read control signal, the second read control signal being based on a data value of the first read data signal.
Claims13
A method of driving an electronic device including a semiconductor memory, the method comprising:
- setting, during a test mode, first and second read voltages in consideration of a characteristic distribution of a plurality of memory cells;
- generating a first read data signal by reading, during a normal mode, data from a read target memory cell among the plurality of memory cells;
- and
- deciding, during the normal mode, to reread the data from the read target memory cell only when a data value of the first read data signal corresponds to a high resistance state of the read target memory cell.
A method of driving an electronic device including a semiconductor memory, the method comprising:
- setting, during a test mode, first and second read voltages in consideration of a characteristic distribution of a plurality of memory cells;
- generating a first read data signal by reading, during a normal mode, data from a read target memory cell among the plurality of memory cells;
- and
- deciding, during the normal mode, to reread the data from the read target memory cell based on a data value of the first read data signal, and
- wherein the setting of the first and second read voltages comprises:
- measuring a first characteristic distribution from the plurality of memory cells before a drift occurs;
- measuring a second characteristic distribution from the plurality of memory cells after the drift occurs;
- and
- setting the first read voltage based on the first characteristic distribution, and setting the second read voltage based on the second characteristic distribution.
Dependencies are inferred from the claim text.