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US 10,895,683 B1Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsTeruhiro Kuwajima, Yasutaka Nakashiba
Life of this patent
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Abstract
A semiconductor device includes an insulating layer, an optical waveguide formed on the insulating layer, a multilayer wiring layer formed on the insulating layer such that the multilayer wiring layer covers the optical waveguide, and a first inductor formed in the multilayer wiring layer.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer formed directly on the semiconductor substrate;
- an optical waveguide formed on the insulating layer;
- an optical modulator formed on the insulating layer, the optical modulator including a portion of the optical waveguide, the optical modulator being configured to modulate a phase of a light propagating through inside of the optical waveguide
- a wiring layer formed on the insulating layer such that the wiring layer covers both the optical modulator and the optical waveguide, the wiring layer comprising a metallic wiring;
- and
- a first inductor formed in the wiring layer, the first inductor being electrically coupled to the optical modulator through the metallic wiring.
4 more elements
Dependencies are inferred from the claim text.