Semiconductor module, manufacturing method thereof, and communication method using the same

A semiconductor device comprising:

• a substrate;
• an optical waveguide formed on the substrate;
• a plurality of first conductor films formed in the same layer as the optical waveguide;
• an insulating film formed on the plurality of first conductor films;
• a second conductor film formed on the insulating film;
• a first interlayer insulating film formed on the substrate such that the first interlayer insulating film covers the optical waveguide, the plurality of first conductor films, the insulating film, and the second conductor film;
• a plurality of first contact plugs formed in the first interlayer insulating film and reaching the plurality of first conductor films, respectively, such that the plurality of first conductor films is disposed between the plurality of first contact plugs and the substrate without the second conductor film and the insulating film being disposed between the plurality of first contact plugs and the substrate;
• and
• a second contact plug formed in the first interlayer insulating film and reaching the second conductor film,
• wherein the plurality of first conductor films is not electrically connected with each other,
• wherein the plurality of first conductor films and the second conductor film are not electrically connected with each other, and
• wherein a plurality of capacitors is respectively constituted with each of the plurality of first conductor films, the insulating film, and the second conductor film.

A semiconductor device comprising:

• a substrate;
• an optical waveguide formed on the substrate;
• a first conductor film formed in the same layer as the optical waveguide;
• an insulating film formed on the first conductor film;
• a second conductor film formed on the insulating film;
• a first interlayer insulating film formed on the substrate such that the first interlayer insulating film covers the optical waveguide, the first conductor film, the insulating film and the second conductor film;
• a first contact plug formed in the first interlayer insulating film and reaching the first conductor film such that the first conductor film is disposed between the first contact plug and the substrate without the second conductor film and the insulating film being disposed between the first contact plug and the substrate;
• and
• a second contact plug formed in the first interlayer insulating film and reaching the second conductor film,
• wherein the first conductor film and the second conductor film are not electrically connected with each other, and
• wherein the insulating film is formed of a laminated film comprising:
• a first silicon oxide film;
• a silicon nitride film formed on the first silicon oxide film;
• and
• a second silicon oxide film formed on the silicon nitride film.