US 10,894,799 B2Granted

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

AssigneeDnf Co., Ltd.

InventorsSung Gi Kim, Se Jin Jang, Byeong-il Yang, Joong Jin Park, Sang-Do Lee, Jeong Joo Park, Sam Dong Lee, Gun-Joo Park, Sang Ick Lee, Myong Woon Kim

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Abstract

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Claims13

Dependent claims

A composition for depositing a silicon-containing thin film, comprising a disilylamine compound represented by the following Chemical Formula 1:

wherein
Ra, Rb and R1 to R9 are each independently hydrogen, C1-C7alkyl or C2-C7alkenyl, with a proviso that Ra and Rb are not hydrogen at the same time.

Dependencies are inferred from the claim text.

Facts

Application: 16/606,728Filed 19 Apr 2018
Priority: KR 10-2017-005110120 Apr 2017
Published: US 2020/0131205 A130 Apr 2020
Granted: 19 Jan 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

C07F 7/10
Compounds having one or more C—Si linkages: containing nitrogen having a Si-N linkage
C23C 16/24
Characterised by the deposition of inorganic material, other than metallic material: deposition of silicon only
C23C 16/45536
Characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures…
C23C 16/45553
Atomic layer deposition [ALD]: characterized by the use of precursors specially adapted for ALD