Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsMiki Miyanaga, Kenichi Watatani, Hideaki Awata, Kazuya Tokuda, Aiko Tominaga
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Abstract
Provided are: an oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.
Claims10
An oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase,
- the roundness of crystal particles composed of the ZnWO4 crystal phase being 0.1 or more and less than 0.7.
Dependencies are inferred from the claim text.