Optical electronics device
AssigneeTexas Instruments Incorporated
InventorSimon Joshua Jacobs
Life of this patent
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Abstract
An optical electronics device includes first, second and third wafers. The first wafer has a semiconductor substrate with a dielectric layer on a side of the semiconductor substrate. The second wafer has a transparent substrate with an anti-reflective coating on a side of the transparent substrate. The first wafer is bonded to the second wafer at a silicon dioxide layer between the semiconductor substrate and the anti-reflective coating. The first and second wafers include a cavity extending from the dielectric layer through the semiconductor substrate and through the silicon dioxide layer to the anti-reflective coating. The third wafer includes micromechanical elements. The third wafer is bonded to the dielectric layer, and the micromechanical elements are contained within the cavity.
Claims20
A device comprising:
- a semiconductor layer with a dielectric layer on a side of the semiconductor layer;
- a transparent layer with a patterned metal layer disposed on a side of the transparent layer, the patterned metal layer having a window aperture, an anti-reflective coating on the patterned metal layer and at least a portion of the transparent layer, a silicon dioxide layer between the semiconductor layer and the anti-reflective coating, and a cavity extending from the dielectric layer through the semiconductor layer and through the silicon dioxide layer to the anti-reflective coating;
- and
- a device layer including micromirror micromechanical elements, the device layer bonded to the dielectric layer, and the micromirror micromechanical elements in the cavity.
A device comprising:
- a semiconductor layer with a dielectric layer on a side of the semiconductor layer;
- a transparent layer with first and second anti-reflective coatings on respective first and second opposite sides of the transparent layer, a silicon dioxide layer between the semiconductor layer and the first anti-reflective coating, a patterned metal layer disposed on the second anti-reflective coating, the patterned metal layer having a window aperture, and a cavity extending from the dielectric layer through the semiconductor layer and through the silicon dioxide layer to the first anti-reflective coating;
- and
- a device layer including micromechanical elements, the device layer being bonded to the dielectric layer by a sealing material, the micromechanical elements in the cavity, the cavity forming an aperture over the micromechanical elements, and the cavity having sidewalls sloping inwardly through the semiconductor layer toward the aperture.
A device comprising:
- a semiconductor layer with a dielectric layer on a side of the semiconductor layer, the dielectric layer having straight sidewalls;
- a transparent layer with a first anti-reflective coating on a first side of the transparent layer and a second anti-reflective coating on a second side of the transparent layer, a patterned metal layer disposed on the second anti-reflective coating, the patterned metal layer having a window aperture, a silicon dioxide layer between the semiconductor layer and the first anti-reflective coating, a cavity extending from the dielectric layer through the semiconductor layer and through the silicon dioxide layer to the first anti-reflective coating, and the silicon dioxide layer having straight sidewalls;
- and
- a device layer including micromechanical elements, the device layer being bonded to the dielectric layer by a sealing material at locations peripherally surrounding the micromechanical elements, the micromechanical elements in the cavity, and the cavity having sidewalls sloping inwardly through the semiconductor layer toward the window aperture.
Dependencies are inferred from the claim text.