Thin film stacks
AssigneeHewlett-Packard Development Company, L.P.
InventorsZhizhang Chen, Mohammed S Shaarawi, Jeremy Sells
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Abstract
A thin film stack can include a metal substrate having a thickness of from 200 angstroms to 5000 angstroms and a passivation barrier disposed on the metal substrate at a thickness of from 600 angstroms to 1650 angstroms. The passivation barrier can include a dielectric layer and an atomic layer deposition (ALD) layer disposed on the dielectric layer. The dielectric layer can have a thickness of from 550 to 950 angstroms. The ALD layer can have a thickness from 50 to 700 angstroms.
Claims20
A thermal inkjet printhead stack, comprising:
- an insulated substrate;
- a resistor disposed on the insulated substrate at a thickness of from 200 angstroms to 5000 angstroms, wherein the resistor has a bulk electrical resistivity of from 200 μΩ•cm to 200 Ω•cm;
- and
- a resistor passivation barrier disposed on the resistor at a thickness of from 600 angstroms to 1400 angstroms, said resistor passivation barrier, comprising:
- a dielectric layer disposed on the resistor at a thickness of from 550 angstroms to 950 angstroms, and
- an ALD layer disposed on the dielectric layer at a thickness of from 50 angstroms to 700 angstroms,
- wherein the thermal inkjet printhead stack does not include a protective layer disposed on the resistor passivation layer.
A thermal inkjet printhead stack, comprising:
- an insulated substrate;
- a resistor disposed on the insulated substrate at a thickness of from 200 angstroms to 5000 angstroms;
- and
- a pair of conductors electrically coupled to the resistor;
- and
- a resistor passivation barrier disposed on the resistor at a thickness of from 600 angstroms to 1400 angstroms, said resistor passivation barrier, comprising:
- a dielectric layer disposed on the resistor at a thickness of from 550 angstroms to 950 angstroms, and
- an ALD layer disposed on the dielectric layer at a thickness of from 50 angstroms to 700 angstroms,
- wherein the thermal inkjet printhead stack does not include a protective layer disposed on the resistor passivation layer.
Dependencies are inferred from the claim text.