Magnetic field controlled transistor

A logic circuit comprising:

• a plurality of magnetic field controlled transistor circuits, each of the transistor circuits in turn comprising:
• a first electrode;
• a second electrode;
• a channel comprising a magneto-resistive material, the channel being arranged between the first and the second electrode and electrically coupled to the first and the second electrode;
• a third electrode;
• a fourth electrode;
• a control layer comprising an electrically conductive material, the control layer being arranged between the third and the fourth electrode and electrically coupled to the third and the fourth electrode;
• and
• an insulating layer comprising an insulating material, the insulating layer being arranged between the channel and the control layer and being configured to electrically insulate the channel from the control layer;
• wherein the magneto-resistive material is a colossal magneto-resistive material.

A high frequency amplifier comprising one or more magnetic field controlled transistor circuits, each of said one or more transistor circuits in turn comprising:

• a first electrode;
• a second electrode;
• a channel comprising a magneto-resistive material, the channel being arranged between the first and the second electrode and electrically coupled to the first and the second electrode;
• a third electrode;
• a fourth electrode;
• a control layer comprising an electrically conductive material, the control layer being arranged between the third and the fourth electrode and electrically coupled to the third and the fourth electrode;
• and
• an insulating layer comprising an insulating material, the insulating layer being arranged between the channel and the control layer and being configured to electrically insulate the channel from the control layer;
• wherein the magneto-resistive material is a colossal magneto-resistive material.

A method for operating a magneto-resistive material, the channel being arranged between the first and the second electrode;

• a third electrode;
• a fourth electrode;
• a control layer comprising an electrically conductive material, the control layer being arranged between the third and the fourth electrode;
• and
• an insulating layer comprising an insulating material, the insulating layer being arranged between the channel comprising the magneto-resistive material and the control layer;
• wherein the magneto-resistive material is a colossal magneto-resistive material;
• the method comprising:
• driving a control current between the third and the fourth electrode through the control layer, thereby applying a magnetic field on the channel and controlling the resistivity of the channel by the magnetic field being induced by the control current.

A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:

• a magnetic field controlled transistor circuit, comprising:
• a first electrode;
• a second electrode;
• a channel comprising a magneto-resistive material, the channel being arranged between the first and the second electrode and electrically coupled to the first and the second electrode;
• a third electrode;
• a fourth electrode;
• a control layer comprising an electrically conductive material, the control layer being arranged between the third and the fourth electrode and electrically coupled to the third and the fourth electrode;
• and
• an insulating layer comprising an insulating material, the insulating layer being arranged between the channel and the control layer and being configured to electrically insulate the channel from the control layer;
• wherein the magneto-resistive material is a colossal magneto-resistive material.