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US 10,886,889 B2Granted
Acoustic wave device and method of fabricating the same, filter and multiplexer
AssigneeTaiyo Yuden Co., Ltd.
InventorTakeshi Sakashita
Life of this patent
Estimating the term…
Abstract
An acoustic wave device includes: a first substrate having a first surface and a side surface; an acoustic wave resonator located on the first surface of the first substrate; and a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate.
Claims19
An acoustic wave device comprising:
- a first substrate having a first surface and a side surface;
- an acoustic wave resonator located on the first surface of the first substrate;
- and
- a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate,
- wherein:
- the side surface includes a first part, which is located closer to the first surface, and a second part, which is located closer to a second surface and is located further out than the first part as viewed from a center of the first substrate, the second surface being an opposite surface from the first surface,
- the first insulator film is in contact with the first part, and is not located on the second part,
- the first substrate has a third surface located between the first part and the second part and connected to the first part and the second part,
- a normal direction of the first surface interacts a normal direction of the first part and a normal direction of the second part,
- a normal direction of the third surface interacts the normal direction of the first part and the normal direction of the second part, and
- none of the acoustic wave resonator is exposed to air.
8 more elements
An acoustic wave device comprising:
- a first substrate having a first surface and a side surface;
- an acoustic wave resonator located on the first surface of the first substrate;
- and
- a first insulator film that covers the acoustic wave resonator and, is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate and is mainly composed of silicon nitride, silicon oxynitride, aluminum oxide, or diamond-like carbon,
- wherein none of the acoustic wave resonator is exposed to air.
2 more elements
An acoustic wave device comprising:
- a first substrate having a first surface and a side surface;
- an acoustic wave resonator located on the first surface of the first substrate;
- a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate;
- a second substrate bonded to a second surface that is an opposite surface of the first substrate from the first surface;
- and
- a second insulator film located between the first substrate and the second substrate,
- wherein:
- the first insulator film is in contact with the side surface of the first substrate,
- the first insulator film is in contact with the second insulator film, and
- the first insulator film and the second insulator film are made of a same material.
7 more elements
Dependencies are inferred from the claim text.